Molecular beam epitaxy of semiconductor quantum wells and superlattices

This publication has 29 references indexed in Scilit:

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• Observation of kinetically controlled monolayer step height distribution at normal and inverted interfaces in ultrathin GaAs/AlxGa1−xAs quantum wells
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• RHEED studies of heterojunction and quantum well formation during MBE growth — from multiple scattering to band offsets
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• GaAs Substrate Preparation for Oval-Defect Elimination during MBE Growth
  Japanese Journal of Applied Physics, 1986
• Well defined superlattice structures made by phase-locked epitary using RHEED intensity oscillations
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• Transmission electron microscope observation of lattice image of AlxGa1−xAs-AlyGa1−yAs superlattices with high contrast
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• Optical and structural properties of molecular-beam epitaxially grown Ga0.47In0.53As/Al0.48In0.52As superlattices, emitting at 1.55 ?m at room temperature
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• Resonant tunneling in semiconductor double barriers
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