A1N/GaAs structures grown by molecular beam epitaxy for metal/insulator/semiconductor devices
- 1 December 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 98 (1) , 75-80
- https://doi.org/10.1016/0040-6090(82)90629-0
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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