Evaluation of SEGR threshold in power MOSFETs

2 December 1994

journal article
conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 41 (6) , 2160-2166
https://doi.org/10.1109/23.340557

Abstract

Bias values, determined experimentally to result in single-event gate rupture (SEGR) in power metal oxide semiconductor field effect transistors (MOSFETs), are used in 2-D device simulations, incorporating the experimental geometry. The simulations indicate that very short time oxide field transients occur for ion strikes when V/sub DS//spl ne/OV. These transients can affect SEGR through hole trapping and redistribution in the oxide.

Keywords

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