Low pressure metalorganic vapour-phase epitaxy growth of ZnTe using triethylamine dimethyl zinc adduct
- 1 October 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 133 (1-2) , 101-107
- https://doi.org/10.1016/0022-0248(93)90109-a
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- ZnSe based multilayer pn junctions as efficient light emitting diodes for display applicationsApplied Physics Letters, 1992
- Blue/green pn junction electroluminescence from ZnSe-based multiple quantum-well structuresApplied Physics Letters, 1992
- Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wellsApplied Physics Letters, 1991
- Quasi-two-dimensional magneto-polarons in tilted magnetic fieldsSemiconductor Science and Technology, 1991
- Blue-green laser diodesApplied Physics Letters, 1991
- New precursors for wide-gap II-VI semiconductorsSemiconductor Science and Technology, 1991
- The growth of ZnSe and other wide-bandgap II-VI semiconductors by MOCVDSemiconductor Science and Technology, 1991
- Role of native defects in wide-band-gap semiconductorsPhysical Review Letters, 1991
- p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growthApplied Physics Letters, 1990
- The MOCVD growth without prereaction of ZnSe and ZnS layersJournal of Crystal Growth, 1989