New precursors for wide-gap II-VI semiconductors
- 1 September 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (9A) , A36-A40
- https://doi.org/10.1088/0268-1242/6/9a/007
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Precursors for II–VI semiconductors: requirements and developmentsJournal of Crystal Growth, 1991
- The MOCVD growth without prereaction of ZnSe and ZnS layersJournal of Crystal Growth, 1989
- Single crystal growth by MOCVD of zinc-based chalcogenides using new group II adduct sourcesJournal of Crystal Growth, 1988
- Use of methylselenol for organometallic vapor-phase epitaxy of ZnSeJournal of Crystal Growth, 1988
- MOCVD layer growth of ZnSe using a new zinc sourceJournal of Crystal Growth, 1987
- ZnSe-ZnS strained-layer superlattice grown by low pressure metalorganic vapor phase epitaxy using methylalkylsApplied Physics Letters, 1986
- Growth kinetics in the MOVPE of ZnSe on GaAs using zinc and selenium alkylsJournal of Crystal Growth, 1986
- On the growth of ZnSe on (100) GaAs by atmospheric pressure movpeMaterials Letters, 1985
- Metalorganic chemical vapour deposition of wide band gap II–VI compoundsJournal of Crystal Growth, 1984
- The use of heterocyclic compounds in the organometallic chemical vapour deposition of epitaxial ZnS, ZnSe and ZnOJournal of Crystal Growth, 1984