MOCVD layer growth of ZnSe using a new zinc source
- 1 September 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 84 (3) , 552-554
- https://doi.org/10.1016/0022-0248(87)90287-9
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- MOCVD Growth of ZnSxSe1-x Epitaxial Layers Lattice-Matched to GaAs Using Alkyls of Zn, S and SeJapanese Journal of Applied Physics, 1985
- On the growth of ZnSe on (100) GaAs by atmospheric pressure movpeMaterials Letters, 1985
- Growth temperature dependence of crystallographic and luminescent properties of ZnSxSe1−x (0 ⪕ x ⪕ 1) by low-pressure MOVPEJournal of Crystal Growth, 1984
- Metalorganic chemical vapour deposition of wide band gap II–VI compoundsJournal of Crystal Growth, 1984
- The use of heterocyclic compounds in the organometallic chemical vapour deposition of epitaxial ZnS, ZnSe and ZnOJournal of Crystal Growth, 1984
- MOCVD growth of ZnSe films using diethylselenideJournal of Crystal Growth, 1984
- The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressureJournal of Crystal Growth, 1982
- Growth and doping of ZnSe and ZnSxSe1-x by organometallic chemical vapor depositionJournal of Crystal Growth, 1982
- High-purity ZnSe obtained by metalorganic chemical vapor deposition epitaxyJournal of Applied Physics, 1981
- Growth and characterization of undoped ZnSe epitaxial layers obtained by organometallic chemical vapour depositionThin Solid Films, 1978