Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formation
- 12 February 2003
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 21 (2) , 706-709
- https://doi.org/10.1116/1.1547747
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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