Effect of an increase in the nitrogen content of the working gas on the microstructure of reactive sputtered TiN thin films
- 1 March 1992
- journal article
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 3 (1) , 41-47
- https://doi.org/10.1007/bf00701093
Abstract
No abstract availableKeywords
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