Parasitic bipolar gain in fully depleted n-channel SOI MOSFET's

This publication has 16 references indexed in Scilit:

• Premature breakdown in non-fully depleted SOI/MOSFETs with body-tied-to-source structure
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Salicided source/drain considerations on UTF SIMOX
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Measurement of substrate current in SOI MOSFETs
  IEEE Electron Device Letters, 1994
• First direct beta measurement for parasitic lateral bipolar transistors in fully-depleted SOI MOSFET's
  IEEE Transactions on Electron Devices, 1993
• Quasi-SOI MOSFETs using selective epitaxy and polishing
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1992
• High-gain lateral bipolar action in a MOSFET structure
  IEEE Transactions on Electron Devices, 1991
• Analysis of the drain breakdown mechanism in ultra-thin-film SOI MOSFETs
  IEEE Transactions on Electron Devices, 1990
• Two-dimensional numerical analysis of the floating region in SOI MOSFETs
  IEEE Transactions on Electron Devices, 1988
• Reduction of kink effect in thin-film SOI MOSFETs
  IEEE Electron Device Letters, 1988
• Simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type silicon
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1985