Gettering of gold by rapid thermal processing
- 28 August 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (9) , 873-875
- https://doi.org/10.1063/1.101626
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Inhomogeneous defect activation by rapid thermal processes in siliconApplied Physics Letters, 1989
- Diffusion of ion-implanted gold in p-type siliconJournal of Applied Physics, 1988
- Rapid isothermal processingJournal of Applied Physics, 1988
- Process-induced and gold acceptor defects in siliconPhysical Review B, 1987
- Gettering of gold in silicon: A tool for understanding the properties of silicon interstitialsJournal of Applied Physics, 1987
- Anomalous diffusion and gettering of transition metals in siliconApplied Physics Letters, 1986
- Laser Damage Gettering and Its Application to Lifetime Improvement in SiliconJournal of the Electrochemical Society, 1981
- Gold gettering in silicon by phosphorous diffusion and argon implantation: Mechanisms and limitationsJournal of Applied Physics, 1981
- Minority carrier lifetime improvement in silicon through laser damage getteringPhysica Status Solidi (a), 1980
- Influence of phosphorus-induced point defects on a gold-gettering mechanism in siliconJournal of Applied Physics, 1980