Observation of radiation induced changes in stress and electrical properties in MOS devices
- 1 December 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 39 (6) , 2146-2151
- https://doi.org/10.1109/23.211415
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
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