The effect of trace amounts of oxygen on the HCl etching of silicon
- 1 September 1979
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 47 (3) , 397-404
- https://doi.org/10.1016/0022-0248(79)90205-7
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- The influence of adsorption and step reconstruction on the growth and etching vectors of silicon (111)Journal of Crystal Growth, 1978
- Surface morphology of HCl etched silicon wafersJournal of Crystal Growth, 1978
- Oxidation of Silicon in the Presence of Chlorine and Chlorine CompoundsJournal of the Electrochemical Society, 1978
- Surface morphology of HCl etched silicon wafersJournal of Crystal Growth, 1977
- Mass Spectrometric Studies on High Temperature Reaction Between Hydrogen Chloride and Silica/SiliconJournal of the Electrochemical Society, 1976
- Gas phase etching of silicon with HClJournal of Crystal Growth, 1974
- The surface morphology of epitaxial siliconJournal of Crystal Growth, 1971