Surface morphology of HCl etched silicon wafers
- 1 November 1977
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 41 (1) , 133-145
- https://doi.org/10.1016/0022-0248(77)90106-3
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Growth and etching of silicon in chemical vapour deposition systems; The influence of thermal diffusion and temperature gradientJournal of Crystal Growth, 1975
- High Temperature Reactions in the Silicon-Hydrogen-Chlorine SystemJournal of the Electrochemical Society, 1974
- Effects of natural and forced convection in vapor phase growth systemsJournal of Crystal Growth, 1972
- A Thorough Thermodynamic Evaluation of the Silicon-Hydrogen-Chlorine SystemJournal of the Electrochemical Society, 1972
- Themodynamic Approach to Diffusion‐Controlled Epitaxial Silicon Deposition in Flow System from SiCl4 + H2 MixturesCrystal Research and Technology, 1972
- The surface morphology of epitaxial siliconJournal of Crystal Growth, 1971
- A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal ReactorJournal of the Electrochemical Society, 1970
- The Kinetics of Epitaxial Silicon Deposition by the Hydrogen Reduction of Chlorosilanes†International Journal of Electronics, 1966
- Vapor Phase Deposition and Etching of SiliconJournal of the Electrochemical Society, 1965
- The growth of crystals and the equilibrium structure of their surfacesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951