Electroluminescent Device Made of Diamond
- 1 August 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (8R)
- https://doi.org/10.1143/jjap.30.1728
Abstract
A diamond light-emitting device was fabricated using boron-doped epitaxial film and a Schottky junction. The emission was white with a spectrum which was quite broad and centered at 530 nm. This spectrum was found to be similar to the spectrum obtained by cathodoluminescence from the boron-doped epitaxial film. The emission is considered to be caused by the injection electroluminescence and the color center named “Band-A” is considered to be the emitted center.Keywords
This publication has 11 references indexed in Scilit:
- Epitaxial Growth of High Quality Diamond Film by the Microwave Plasma-Assisted Chemical-Vapor-Deposition MethodJapanese Journal of Applied Physics, 1990
- Field-Effect Transistors using Boron-Doped Diamond Epitaxial FilmsJapanese Journal of Applied Physics, 1989
- Electrical Characteristics of Metal Contacts to Boron-Doped Diamond Epitaxial FilmJapanese Journal of Applied Physics, 1989
- Icosahedral crystals: neutron diffraction tells you where the atoms areJournal of Physics: Condensed Matter, 1989
- Selective Nucleation of Single Crystal CVD Diamond and its Applicability to Semiconductor DevicesMRS Proceedings, 1989
- Characterization of conducting diamond filmsVacuum, 1986
- Ab InitioCalculation of the Electronic Structure and Optical Properties of Diamond Using the Discrete Variational MethodPhysical Review B, 1971
- Impurity conduction in synthetic semiconducting diamondJournal of Physics C: Solid State Physics, 1970
- Bound Excitons and Donor-Acceptor Pairs in Natural and Synthetic DiamondPhysical Review B, 1965
- Electroluminescence of Semiconducting DiamondsPhysical Review B, 1957