Luminescence from gold-passivated gallium arsenide surfaces excited with a scanning tunneling microscope
- 31 August 1992
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 83 (8) , 535-537
- https://doi.org/10.1016/0038-1098(92)90646-q
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Nanometer resolution in luminescence microscopy of III-V heterostructuresApplied Physics Letters, 1990
- Electronic states of metal atoms on the GaAs(110) surface studied by scanning tunneling microscopyPhysical Review Letters, 1989
- Ballistic-electron-emission microscopy investigation of Schottky barrier interface formationApplied Physics Letters, 1989
- Triangular facets on the GaAs(110) surface observed by scanning tunneling microscopySurface Science, 1989
- Enhanced Photon Emission in Scanning Tunnelling MicroscopyEurophysics Letters, 1989
- Tunneling spectroscopy of the GaAs(110) surfaceJournal of Vacuum Science & Technology B, 1987
- Optical-Emission Properties of Interface States for Metals on III-V Semiconductor CompoundsPhysical Review Letters, 1986
- Surface morphology of GaAs(110) by scanning tunneling microscopyPhysical Review B, 1985
- The interaction of thin Au and Al overlayers with the GaAs(110) surfaceSurface Science, 1980
- Picosecond time resolved reflectivity of direct gap semiconductorsSolid State Communications, 1978