L.P.E. growth rate in Ga-As-Ge and Ga-As-Sn systems
- 1 January 1984
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 19 (1) , 21-25
- https://doi.org/10.1051/rphysap:0198400190102100
Abstract
High doping levels in GaAs grown by L.P.E. necessitate large amounts of Ge or Sn in the melt. The influence of these elements on the growth rate of GaAs is studied. The experiments were carried out at 1 073 K over wide ranges : xLGe up to 0.55 and xL Sn up to 0.8. It was shown that the layer thickness is not modified by Ge whereas it is greatly increased by large fractions of Sn. These results are then analysed on the basis of a diffusion limited growth model. The estimated values of As diffusion in Ga-Ge and Ga-Sn melts increase with x Ldopant, but are about the same value as in pure GaKeywords
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