Polycrystalline hexagonal boron nitride films on SiO2 for III–V semiconductor applications
- 1 April 1989
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 4 (2) , 350-354
- https://doi.org/10.1557/jmr.1989.0350
Abstract
Isotropic hexagonal BN (h-BN) films were deposited on SiO2 crucibles used for synthesis of GaAs. Deposited films were analyzed for composition, morphology, and growth rates using proton resonant scattering, optical absorption, x-ray and electron diffraction, and transmission electron microscopy. The silicon concentration of GaAs synthesized in BN coated crucibles was approximately one order of magnitude higher than that for GaAs synthesized in uncoated crucibles under identical synthesis conditions.Keywords
This publication has 11 references indexed in Scilit:
- Investigations of thin films on GaAs using the proton resonant scattering techniqueNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Growth and characterization of low defect GaAs by vertical gradient freezeJournal of Crystal Growth, 1987
- A novel application of the vertical gradient freeze method to the growth of high quality III–V crystalsJournal of Crystal Growth, 1986
- Low temperature deposition of hexagonal BN films by chemical vapour depositionThin Solid Films, 1982
- Chemical vapour deposition of thin films of BN onto fused silica and sapphireThin Solid Films, 1981
- Optical properties of hexagonal boron nitridePhysical Review B, 1976
- Seeman–Bohlin X-ray diffractometer for thin filmsJournal of Applied Crystallography, 1970
- Preparation of Oxygen-Doped GaAs in a Three-Zone Bridgman FurnaceJapanese Journal of Applied Physics, 1969
- Reactions of Gallium with Quartz and with Water Vapor, with Implications in the Synthesis of Gallium ArsenideJournal of the Electrochemical Society, 1962
- Energy-Level Model for High-Resistivity Gallium ArsenideNature, 1961