Sensitivity of contactless transient spectroscopy and actual measurement of localized states in oxidized Si wafer
- 1 March 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 210 (1-3) , 379-383
- https://doi.org/10.1016/s0022-0248(99)00715-0
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
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