Isothermal capacitance transient spectroscopy of electron and hole emissions from interface states in metal-oxide-semiconductor transistors

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Abstract
Isothermal capacitance transient spectroscopy has been expansively applied to the study of interface states in metal‐oxide‐semiconductor (MOS) transistors. We propose a simple technique to precisely measure the emission transient of both majority carriers and minority carriers using the identical Si‐MOS transistor. We have improved on a conventional technique to measure the emission transient of minority carriers to solve a few problems. The emission transient of majority carriers is measured after applying the injection pulse to the gate electrode as usual. Similarly, the emission transient of minority carriers is measurable merely by reversing the injection‐pulse polarity. The validity of the proposed technique has been demonstrated with the use of Au‐diffused Si‐MOS transistors. As a result, the density of the interface states has been determined over the energy range from Ev+0.30 eV to Ec−0.24 eV using the very same Si‐MOS transistor.