Nitrogen migration and nitride formation during low temperature reactive annealing of titanium
- 1 January 1988
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 156 (1) , 117-125
- https://doi.org/10.1016/0040-6090(88)90287-8
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- TiN films prepared by nitrogen implantation on Ti-coated fused SiO2Solar Energy Materials, 1985
- Structure and properties of TiN coatingsThin Solid Films, 1985
- Thermal- and radiation-stability of hydrogen-implanted silicon standards for ion-beam analysisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
- Mechanisms of reactive sputtering of titanium nitride and titanium carbide II: Morphology and structureThin Solid Films, 1983
- Thermal Oxidation of Reactively Sputtered Titanium Nitride and Hafnium Nitride FilmsJournal of the Electrochemical Society, 1983
- Diffusion of nitrogen in α-TiApplied Physics Letters, 1983
- Applications of TiN thin films in silicon device technologyThin Solid Films, 1982
- Auger and x-ray characterization of surface nitride films on Ti, Zr, and HfJournal of Vacuum Science and Technology, 1982
- Microstructures of TiN and Ti2N deposits prepared by activated reactive evaporationThin Solid Films, 1979
- Étude cinétique, diffusionnelle et morphologique de la nitruration du titane par l'azote à haute température: Propriétés mécaniques et structurales des solutions solides Tiα-azoteJournal of the Less Common Metals, 1977