Low temperature GaAs/Si direct wafer bonding
- 30 March 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (7) , 677-678
- https://doi.org/10.1049/el:20000507
Abstract
GaAs-Si low temperature bonding has been achieved using spin-on-glass as the intermediate layer. Interface energies of ~1.7 J/m2 were obtained after thermal annealing at only 200°C. The interface energy is sufficiently high to allow thinning of the GaAs wafer down to 5–10 µm.Keywords
This publication has 6 references indexed in Scilit:
- Preparation of silicon-on-gallium arsenide wafers for monolithic optoelectronic integrationIEEE Photonics Technology Letters, 1999
- Development of a glass-bonded compliant substrateJournal of Crystal Growth, 1998
- Materials integration of gallium arsenide and silicon by wafer bondingApplied Physics Letters, 1998
- Transfer of 3 in GaAs film on silicon substrateby proton implantation processElectronics Letters, 1998
- Characterization of an individual Si thin layer buried in GaAs (001) using Raman spectroscopyJournal of Applied Physics, 1991
- Characterization of thin AlGaAs/InGaAs/GaAs quantum-well structures bonded directly to SiO2/Si and glass substratesJournal of Applied Physics, 1989