The surface generation hump in irradiated power MOSFETs
- 1 December 1994
- journal article
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 41 (6) , 2443-2451
- https://doi.org/10.1109/23.340600
Abstract
A method of quantifying near midgap-level interface traps, capture cross section, and changes in oxide-trapped charge using a surface generation hump in the subthreshold curve (I/sub d/ vs. V/sub g/) of power MOSFETs is developed. The surface generation hump is a result of the generation of carriers from traps at the depleted Si-SiO/sub 2/ interface in a gated diode-type structure. The charge neutrality point of the hump is determined, and shifts of this point are due solely to changes in oxide-trapped charge. Another point is used to determine the stretchout of the hump, and thus the interface trap density. With the interface trap density determined, the capture cross section is extracted from the surface generation velocity.Keywords
This publication has 10 references indexed in Scilit:
- Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devicesJournal of Applied Physics, 1993
- Trapped-hole annealing and electron trapping in metal-oxide-semiconductor devicesApplied Physics Letters, 1992
- Post-irradiation behavior of the interface state density and the trapped positive chargeIEEE Transactions on Nuclear Science, 1990
- Annealing of total dose damage: redistribution of interface state density on [100], [110] and [111] orientation siliconIEEE Transactions on Nuclear Science, 1988
- Reversibility of trapped hole annealingIEEE Transactions on Nuclear Science, 1988
- Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistorsApplied Physics Letters, 1986
- The gate-controlled diode s0 measurement and steady-state lateral current flow in deeply depleted MOS structuresSolid-State Electronics, 1974
- Surface recombination in semiconductorsSurface Science, 1968
- Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditionsSolid-State Electronics, 1966
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952