Misfit evolution in the early stages of the heteroepitaxial growth of GaAs on Si(001): An in-situ X-ray scattering study
- 2 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 102 (1-2) , 293-302
- https://doi.org/10.1016/0022-0248(90)90914-7
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- GaAs on Si and related systems: Problems and prospectsJournal of Crystal Growth, 1989
- Electronic and optical devices with gallium arsenide on silicon prepared by MBEJournal of Crystal Growth, 1989
- Interface Study on GaAs-on-Si by Transmission Electron MicroscopyJapanese Journal of Applied Physics, 1988
- Initial stages of epitaxial growth of GaAs on (100) siliconJournal of Applied Physics, 1987
- The growth of GaAs on Si by MBEJournal of Crystal Growth, 1987
- Nucleation and initial growth of GaAs on Si substrateApplied Physics Letters, 1986
- Characterization of Lattice Defect Structures at GaAs/Si Interface by Transmission Electron MicroscopyJapanese Journal of Applied Physics, 1986
- Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVDJapanese Journal of Applied Physics, 1984
- Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)Applied Physics Letters, 1984