Ion implantation induced swelling in 6H-SiC
- 23 June 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (25) , 3425-3427
- https://doi.org/10.1063/1.119191
Abstract
Ion implantation induced surface expansion (swelling) of 6H-SiC was investigated through the measurement of the step height between implanted and unimplanted areas. The samples were irradiated at room temperature with 500 keV ions in the dose range Swelling was related to dose and the area density of ion-induced damage measured by Rutherford backscattering channeling technique. The observed trend is consistent with the hypothesis that the volume expansion of the ion damaged crystal is proportional to the area density of displaced atoms, plus an additional relaxation occurring at the onset of the crystalline to amorphous transition.
Keywords
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