A comparative EPR study of ion implantation induced damage in Si, Si1−xGex (x ≠ 0) and SiC
- 1 December 1996
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 120 (1-4) , 139-146
- https://doi.org/10.1016/s0168-583x(96)00496-x
Abstract
No abstract availableKeywords
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