A two-layer magneto-TLM contact resistance model: application to modulation-doped FET structures
- 1 February 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (2) , 133-138
- https://doi.org/10.1109/16.2431
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Mobility measurements with a standard contact resistance patternIEEE Electron Device Letters, 1987
- Backscattering analysis of AuGe-Ni ohmic contacts of n-GaAsJournal of Applied Physics, 1986
- Contact and metallization problems in GaAs integrated circuitsJournal of Vacuum Science & Technology A, 1986
- Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistorsIEEE Transactions on Electron Devices, 1986
- Classical magnetoresistance measurements in AlxGa1−xAs/GaAs MODFET structures: Determination of mobilitiesSolid-State Electronics, 1986
- Two-layer model for source resistance in selectively doped heterojunction transistorsIEEE Transactions on Electron Devices, 1985
- IIIA-6 an analysis of low source resistance HEMT with multiple cap layerIEEE Transactions on Electron Devices, 1984
- Obtaining the specific contact resistance from transmission line model measurementsIEEE Electron Device Letters, 1982
- Models for contacts to planar devicesSolid-State Electronics, 1972