Production of amorphous zones in GaAs by the direct impact of energetic heavy ions
- 1 January 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (1) , 49-56
- https://doi.org/10.1063/1.371825
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Point Defects and their Reactions in Semiinsulating GaAs after Low Temperature e--IrradiationMaterials Science Forum, 1992
- Dose rate effects on damage formation in ion-implanted gallium arsenideNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Transmission electron microscopy investigation of the damage produced in individual displacement cascades in GaAs and GaPNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- The influence of dose rate and analysis procedures on measured damage in P+ ion implanted GaAsRadiation Effects, 1984
- Flux, fluence and implantation temperature dependence of disorder produced by 40 keV N+ion irradiation of GaAsRadiation Effects, 1980
- Dose rate effects in indium implanted GaAsRadiation Effects, 1974
- Low temperature channeling measurements of ion implantation lattice disorder in GaAs†Radiation Effects, 1971
- Nucleation of damage centres during ion implantation of siliconRadiation Effects, 1971
- Recovery of low temperature electron irradiation-induced damage inn-type gaasRadiation Effects, 1970
- A model for the formation of amorphous Si by ion bombardmentRadiation Effects, 1970