Sputtering Yield Changes, Surface Movement and Apparent Profile Shifts in SIMS Depth Analyses of Silicon Using Oxygen Primary Ions
- 1 June 1996
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 24 (6) , 389-398
- https://doi.org/10.1002/(sici)1096-9918(199606)24:6<389::aid-sia135>3.0.co;2-l
Abstract
No abstract availableKeywords
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