Simultaneous AES and SIMS depth profiling of standard Ta2O5 films
- 1 January 1988
- journal article
- Published by Wiley in Surface and Interface Analysis
- Vol. 11 (1-2) , 88-93
- https://doi.org/10.1002/sia.740110111
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Distribution of hydrogen in the NPL standard ta2O5 filmsSurface and Interface Analysis, 1986
- The ultra-high resolution depth profiling reference material — Ta2O5 anodically grown on TaSurface Science, 1984
- AES sputter profiling and angle resolved XPS of in situ grown very thin Tantalum‐oxide filmsSurface and Interface Analysis, 1984
- Beam-induced broadening effects in sputter depth profilingVacuum, 1984
- Secondary Neutral Mass Spectrometry (SNMS) and Its Application to Depth Profile and Interface AnalysisPublished by Springer Nature ,1984
- Characterization of a high depth‐resolution tantalum pentoxide sputter profiling reference materialSurface and Interface Analysis, 1983
- The depth dependence of the depth resolution in composition–depth profiling with Auger Electron SpectroscopySurface and Interface Analysis, 1983
- Depth profiling by SIMS—depth resolution, dynamic range and sensitivitySurface and Interface Analysis, 1982
- Quantitative secondary ion mass spectrometry: A reviewSurface and Interface Analysis, 1980
- Time-of-Flight Effects in Quadrupole-Based Scanning Ion MicroprobesScanning, 1980