AlGaAs/GaAs distributed feedback lasers with first-order grating fabricated by metalorganic chemical vapor deposition
- 13 July 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (2) , 63-65
- https://doi.org/10.1063/1.98597
Abstract
Distributed feedback AlGaAs/GaAs lasers with first-order grating (1295 Å) were fabricated and successfully operated under continuous wave conditions at room temperature. A coupling coefficient of 115 cm−1 and a threshold current of 47 mA were obtained. A stable single-mode oscillation was maintained up to 100 °C.Keywords
This publication has 12 references indexed in Scilit:
- Low threshold operation of a GaAlAs/GaAs distributed feedback laser with double channel planar buried heterostructureApplied Physics Letters, 1986
- Low-threshold AlGaAs/GaAs distributed feedback lasers fabricated by MOCVDElectronics Letters, 1986
- Continuous wave operation of ridge waveguide AlGaAs/GaAs distributed feedback lasers with low threshold currentApplied Physics Letters, 1986
- Mode selectivity in DFB lasers with cleaved facetsElectronics Letters, 1985
- On the Use of Effective Refractive Index in DFB Laser Mode SeparationJapanese Journal of Applied Physics, 1983
- Holographic interference lithography for integrated opticsIEEE Transactions on Electron Devices, 1978
- Lasing characteristics of distributed-feedback GaAs-GaAlAs diode lasers with separate optical and carrier confinementIEEE Journal of Quantum Electronics, 1976
- Distributed-Feedback Double-Heterostructure GaAs Injection Laser with Fundamental GratingApplied Optics, 1974
- Double-heterostructure GaAs distributed-feedback laserApplied Physics Letters, 1974
- Optically pumped GaAs waveguide lasers with a fundamental 0.11 μ corrugation feedbackOptics Communications, 1973