Compensation mechanisms in nominally undoped semi-insulating InP and comparison with undoped InP grown under stoichiometry control
- 1 December 1991
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (12) , 1065-1068
- https://doi.org/10.1007/bf03030208
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Growth of InP crystals by the horizontal gradient freeze techniqueMaterials Science and Engineering: B, 1991
- Semi-insulating electrical properties of undoped inp after heat treatment in a phosphorus atmosphereApplied Physics A, 1989
- Electronic Structures of Native Complex Defects in GaP and InPDefect and Diffusion Forum, 1989
- On the prospect of as-grown semi-insulating InP: ODMR of the PInantisiteJournal of Physics C: Solid State Physics, 1985
- Non-equilibrium carrier radiative recombination in indium phosphide single crystalsPhysica Status Solidi (a), 1983
- Double zinc diffusion fronts in InP—Theory and experimentApplied Physics Letters, 1983
- Deep radiative levels in InPJournal of Applied Physics, 1982
- Deep Radiative Transitions in InPMRS Proceedings, 1982
- A model for the ∼ 1.10eV emission band in InPSolid State Communications, 1980
- Phase Equilibria and Vapor Pressures of Pure Phosphorus and of the Indium/Phosphorus System and Their Implications Regarding Crystal Growth of InPJournal of the Electrochemical Society, 1974