Γ- and X-band contributions to nonresonant tunneling in GaAs/Al0.35Ga0.65As double quantum wells
- 11 December 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (24) , 2517-2519
- https://doi.org/10.1063/1.101994
Abstract
Time‐resolved photoluminescence in the picosecond regime is performed on an asymmetric GaAs/Al0.35Ga0.65As double quantum well structure with a barrier thickness of 6 nm to obtain the Γ‐ and X‐point barrier contributions to nonresonant tunneling. Application of hydrostatic pressure up to 37 kbar at 5 K reveals that tunneling via virtual X states is at least 800 times less efficient than via virtual Γ states. Above 24.5 kbar an extremely fast scattering of electrons out of the n=1 quantized level of the narrower quantum well is observed.Keywords
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