Separation of surface and bulk minority-carrier lifetimes in silicon
- 1 April 1974
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 45 (4) , 576-579
- https://doi.org/10.1063/1.1686688
Abstract
One of the major problems in interpreting photoconductive lifetime measurements in silicon is the separation of the lifetime of carriers excited near the surface and that of carriers excited in the bulk of the crystal. This paper describes an experimental method of achieving this separation.Keywords
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