Consideration of doping profiles in MOSFET mobility modeling
- 1 July 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (7) , 1153-1155
- https://doi.org/10.1109/16.3381
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- The effect of channel implants on MOS transistor characterizationIEEE Transactions on Electron Devices, 1987
- An improved method of MOSFET modeling and parameter extractionIEEE Transactions on Electron Devices, 1987
- A semi-empirical model of the MOSFET inversion layer mobility for low-temperature operationIEEE Transactions on Electron Devices, 1987
- High-accuracy MOS models for computer-aided designIEEE Transactions on Electron Devices, 1980
- Scattering Mechanism and Low Temperature Mobility of MOS Inversion LayersJapanese Journal of Applied Physics, 1974
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967