Effect of the boron doping concentration and Fermi level on the generation of crystal originated particles in p-type Czochralski silicon wafers

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Abstract
The effect of the boron doping concentration on the generation of crystal originated particles in p‐type 200‐mm‐diam Czochralski silicon wafers was examined. The results indicate that the generation of crystal originated particles is suppressed by heavily doping with boron. Based upon the band‐gap theory and from the argument that the defects are vacancy type, the generation of crystal originated particles could occur via vacancy aggregation at temperatures below 1000 °C. In the present model, negatively charged vacancies which are dominant at high temperatures are hypothesized to be the point defect species contributing to the generation of crystal originated particles.