Growth of CuGaS2 Single Crystals by Traveling Heater Method
- 1 October 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (10A) , L1859
- https://doi.org/10.1143/jjap.29.l1859
Abstract
Growth of bulk CuGaS2 single crystals by the traveling heater method (THM) with In solvent has been investigated. The THM growth was performed at 1050°C, where the In solution saturated with stoichiometric CuGaS2 solute is a single liquid phase. The obtained single crystals were solid solutions CuGa x In1-x S2, and the mole fraction 1-x of CuInS2 was 0.02–0.03 along the entire crystal length. The photoluminescence spectra show a weak near-band-edge emission peak and two strong and broad low-energy emission peaks.Keywords
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