Photoinduced change in the density of localized states near the conduction band of dopeda-Si:H
- 15 July 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 36 (3) , 1706-1709
- https://doi.org/10.1103/physrevb.36.1706
Abstract
We observed that the traveling-wave drift mobility decreases with increasing density of photoinduced midgap defects in hydrogenated amorphous silicon. We interpret this decrease as a broadening of the tail of localized states below the electron mobility edge. This broadening of the tail accompanies the increase in midgap defect density.Keywords
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