Effect of the type of silicon on some fundamental properties of the Si–SiO2 interface
- 16 February 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 21 (2) , 665-675
- https://doi.org/10.1002/pssa.2210210232
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Electronic properties of the Si-SiO2 interface as a function of oxide growth conditions. II. Fixed chargePhysica Status Solidi (a), 1972
- Electronic properties of the Si-SiO2 interface as a function of oxide growth conditions. I. Surface statesPhysica Status Solidi (a), 1972
- Distribution energetique des etats de surface a l'interface effet de differents traitementsSolid State Communications, 1970
- Si-SiO[sub 2] Fast Interface State MeasurementsJournal of the Electrochemical Society, 1968
- ON THE ROLE OF SODIUM AND HYDROGEN IN THE Si–SiO2 SYSTEMApplied Physics Letters, 1966
- Surface states at steam-grown silicon-silicon dioxide interfacesIEEE Transactions on Electron Devices, 1966
- Influence of heat treatments and ionizing irradiations on the charge distribution and the number of surface states in the Si-SiO2systemIEEE Transactions on Electron Devices, 1966
- The influence of oxidation rate and heat treatment on the Si surface potential in the Si-SiO2systemIEEE Transactions on Electron Devices, 1966
- FREQUENCY DEPENDENCE OF THE IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURESApplied Physics Letters, 1966
- DENSITY OF SiO2–Si INTERFACE STATESApplied Physics Letters, 1966