Two-dimensional hole gas in acceptor δ-doped GaAs

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Abstract
Self-consistent calculations of the hole-subband structure of acceptor δ-doped GaAs are reported. Numerical reults are obtained for the self-consistent potential, hole density, and subband energy levels. Many-body effects beyond the Hartree approximation, such as exchange and correlation, are included in the parabolic or diagonal approximation of the full Luttinger Hamiltonian within the density-functional formalism and are shown to be important. Results are also reported for the less ideal case of a doping profile with a Gaussian distribution of dopants.