High-temperature sputtered amorphous GaAs
- 1 April 1995
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 183 (1-2) , 175-181
- https://doi.org/10.1016/0022-3093(94)00564-8
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Structural characterization of unhydrogenated amorphous GaAsJournal of Non-Crystalline Solids, 1991
- Surface composition and structure changes in GaAs compounds due to low-energy Ar+ ion bombardmentJournal of Vacuum Science & Technology A, 1989
- New plasma deposition process of amorphous GaxAs1−x in an r.f. capacitively coupled diode systemThin Solid Films, 1986
- Semiconducting and other major properties of gallium arsenideJournal of Applied Physics, 1982
- Disorder effects and the optical properties of amorphous GaAs and GaPPhilosophical Magazine Part B, 1981
- Amorphous GaAs Films by Molecular Beam DepositionJapanese Journal of Applied Physics, 1980
- Nucleation, growth and transformation of amorphous and crystalline solids condensing from the gas phaseAstrophysics and Space Science, 1979
- Preparation of highly photoconductive amorphous silicon by rf sputteringSolid State Communications, 1977
- Growth of Sputtered vs Evaporated Metal FilmsJournal of Applied Physics, 1966
- Sputtering Yields of Several Semiconducting Compounds under Argon Ion BombardmentJournal of Applied Physics, 1966