New dielectric materials and insulators for microelectronic applications
- 31 December 1996
- journal article
- review article
- Published by Elsevier in Ceramics International
- Vol. 22 (5) , 435-442
- https://doi.org/10.1016/0272-8842(95)00103-4
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Endurance properties of ferroelectric PZT thin filmsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low‐Pressure chemical vapour deposition of tantalum pentoxide films for ulsi devices using tantalum pentaethoxide as precursorAdvanced Materials for Optics and Electronics, 1992
- Chemical vapour deposition of oxide and metal films for VLSI applicationsThin Solid Films, 1989
- Low Pressure Deposition of Doped SiO2 by Pyrolysis of Tetraethylorthosilicate (TEOS): II . Arsenic Doped FilmsJournal of the Electrochemical Society, 1989
- A low-permittivity interconnection using an SiBN interlayerIEEE Transactions on Electron Devices, 1989
- In situ planarization of intermetal dielectrics: Process steps, degree of planarization and film propertiesThin Solid Films, 1989
- Conduction mechanisms in sputtered Ta2O5 on Si with an interfacial SiO2 layerJournal of Applied Physics, 1989
- Low Pressure Deposition of Doped SiO2 by Pyrolysis of Tetraethylorthosilicate (TEOS): I . Boron and Phosphorus Doped FilmsJournal of the Electrochemical Society, 1987
- Dielectric Materials in Semiconductor DevicesJournal of Vacuum Science and Technology, 1969
- Selection of thin film capacitor dielectricsThin Solid Films, 1968