Stoichiometric low-temperature GaAs and AlGaAs: A reflection high-energy electron-diffraction study
- 1 October 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (7) , 4467-4471
- https://doi.org/10.1063/1.359856
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Effects of As4 flux on reflection high-energy electron diffraction oscillations during growth of GaAs at low temperaturesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Optoelectronic applications of LTMBE III–V materialsMaterials Science and Engineering: B, 1993
- Molecular beam epitaxial GaAs grown at low temperaturesThin Solid Films, 1993
- Stoichiometry Related Phenomena in Low Temperature Grown GaAsMRS Proceedings, 1993
- Elementary processes in the MBE growth of GaAsApplied Surface Science, 1992
- Migration-Enhanced Epitaxy of GaAs and AlGaAsJapanese Journal of Applied Physics, 1988
- An investigation of GaAs films grown by MBE at low substrate temperatures and growth ratesJournal of Vacuum Science & Technology B, 1983
- Growth-parameter dependence of deep levels in molecular-beam-epitaxial GaAsElectronics Letters, 1980
- Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxyJournal of Crystal Growth, 1978
- Surface processes controlling the growth of GaxIn1−xAs and GaxIn1−xP alloy films by MBEJournal of Crystal Growth, 1978