Total dose effects on gate controlled lateral PNP bipolar junction transistors

This publication has 8 references indexed in Scilit:

• Implementation of total dose constraints at the design level of full custom bipolar integrated circuits
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Radiation-induced gain degradation in lateral PNP BJTs with lightly and heavily doped emitters
  IEEE Transactions on Nuclear Science, 1997
• Modeling ionizing radiation induced gain degradation of the lateral PNP bipolar junction transistor
  IEEE Transactions on Nuclear Science, 1996
• Recent advances in understanding total-dose effects in bipolar transistors
  IEEE Transactions on Nuclear Science, 1996
• An analytical model of the VBE-dependence of current-splitting in CMOS-compatible lateral bipolar transistors
  Solid-State Electronics, 1995
• An improved analytical model for collector currents in lateral bipolar transistors
  IEEE Transactions on Electron Devices, 1994
• MOS transistors operated in the lateral bipolar mode and their application in CMOS technology
  IEEE Journal of Solid-State Circuits, 1983
• Comparison of 60Co Response and 10 KeV X-Ray Response in MOS Capacitors
  IEEE Transactions on Nuclear Science, 1983