X-band varactor tuned monolithic GaAs FET oscillators†
- 1 May 1988
- journal article
- semiconductor devices
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 64 (5) , 731-751
- https://doi.org/10.1080/00207218808962847
Abstract
The design, fabrication and performance of X-band varactor-tuned monolithic GaAs FET oscillators is described. The design is based on small and large signal device characteristics. A manufacturable process is used in order to realize the oscillators. The experimental performance agrees with the theoretical expectations within 0·2% for the oscillation frequency and 4% for the tuning bandwidth. Best tuning bandwidth and output power values exceeded 2 GHz and 28 mW. Wafer dispersion depends on oscillator characteristics and varies between ±1% and ±7·7% for oscillators with a varactor in the FET source. The rf wafer yield is 65%. Finally, noise and temperature characteristics are given.Keywords
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