Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
- 1 August 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (8R)
- https://doi.org/10.1143/jjap.24.1030
Abstract
The variation of the solid composition x at the initial stage of the LPE growth of In x Ga1-x As y P1-y (yD Ga=1.3 ×10-4 cm2/s and D P=2.3 ×10-4 cm2/s, respectively.Keywords
This publication has 28 references indexed in Scilit:
- LPE Growth and Surface Morphology of InxGa1-xAsyP1-y (y≤0.01) on (100) GaAsJapanese Journal of Applied Physics, 1984
- GaxIn1-xAsyP1-y/Gax'In1-x'Asy'P1-y' DH Visible Injection Lasers Lattice Matched with (100)GaAsJapanese Journal of Applied Physics, 1984
- Effect of Lattice Mismatch on the Solidus Compositions of GaxIn1-xP Liquid Phase Epitaxial CrystalsJapanese Journal of Applied Physics, 1983
- Calculation of III-III-V-V quaternary layer thickness grown by liquid phase epitaxy - application to InGaAsPJournal of Crystal Growth, 1982
- Composition profiles and growth kinetics of GaxIn1−xP LPE layers: Experiments and theoretical approachJournal of Crystal Growth, 1981
- LPE Growth of In1-xGaxP1-zAsz (z ≦0.01) on (1 0 0) GaAs Substrates and Its Lattice Constants and PhotoluminescenceJapanese Journal of Applied Physics, 1981
- The crystallization path: A way to the GaxIn1-xAsyP1-yphase diagramIEEE Journal of Quantum Electronics, 1981
- Continuous operation of visible-spectrum in1-xGaxP1-zAszlaser diodes (6280 Å, 77 K)IEEE Journal of Quantum Electronics, 1978
- Variation of Solid Composition and Thickness during LPE Growth of Al x Ga1 − x AsJournal of the Electrochemical Society, 1976
- Calculation of ternary and quaternary III–V phase diagramsJournal of Crystal Growth, 1974