High power and high efficiency AlInAs/GaInAs on InP HEMTs
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- High-performance InP-based HEMT millimeter-wave low-noise amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- High performance V-band low noise amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Fabrication of a 80 nm self-aligned T-gate AlInAs/GaInAs HEMTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTsIEEE Electron Device Letters, 1989
- AlInAs-GaInAs HEMT for microwave and millimeter-wave applicationsIEEE Transactions on Microwave Theory and Techniques, 1989
- A double-heterojunction doped-channel pseudomorphic power HEMT with a power density of 0.85 W/mm at 55 GHzIEEE Electron Device Letters, 1988