Orientation dependent amphoteric behavior of group IV impurities in the molecular beam epitaxial and vapor phase epitaxial growth of GaAs
- 1 May 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 96 (1) , 27-39
- https://doi.org/10.1016/0022-0248(89)90272-8
Abstract
No abstract availableKeywords
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