A mobility model including the screening effect in MOS inversion layer

This publication has 14 references indexed in Scilit:

• A unified mobility model for device simulation
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Physically-based models for effective mobility and local-field mobility of electrons in MOS inversion layers
  Solid-State Electronics, 1991
• Extraction of MOSFET carrier mobility characteristics and calibration of a mobility model for numerical device simulation
  Solid-State Electronics, 1990
• MOSFET electron inversion layer mobilities - a physically based semi-empirical model for a wide temperature range
  IEEE Transactions on Electron Devices, 1989
• Universality of mobility-gate field characteristics of electrons in the inversion charge layer and its application in MOSFET modeling
  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1989
• A physically based mobility model for numerical simulation of nonplanar devices
  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988
• Semi-empirical equations for electron velocity in silicon: Part II—MOS inversion layer
  IEEE Transactions on Electron Devices, 1983
• Relation of drift velocity to low-field mobility and high-field saturation velocity
  Journal of Applied Physics, 1980
• Electron mobility empirically related to the phosphorus concentration in silicon
  Solid-State Electronics, 1975
• Carrier mobilities in silicon empirically related to doping and field
  Proceedings of the IEEE, 1967