The valence band alignment at ultrathin SiO2/Si interfaces
Open Access
- 1 February 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (3) , 1606-1608
- https://doi.org/10.1063/1.363895
Abstract
High resolution x-ray photoelectron spectroscopy has been used to determine the valence band alignment at ultrathin SiO2/Si interfaces. In the oxide thickness range 1.6–4.4 nm the constant band-offset values of 4.49 and 4.43 eV have been obtained for the dry SiO2/Si(100) and the wet SiO2/Si(100) interfaces, respectively. The valence band alignment of dry SiO2/Si(111) (4.36 eV) is slightly smaller than the case of the dry SiO2/Si(100) interface.This publication has 12 references indexed in Scilit:
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