Pulsed laser annealing of GaAs in a high-pressure argon gas ambience

Publisher Website

31 December 1982

journal article
Published by Elsevier in Materials Letters

Vol. 1 (3-4) , 111-115
https://doi.org/10.1016/0167-577x(82)90021-0

Abstract

No abstract available

Keywords

HIGH PRESSURE

This publication has 5 references indexed in Scilit:

Solid Solubilities of Group-III and Group-V Dopants in Pulsed Laser-Annealed Silicon
Japanese Journal of Applied Physics, 1980
Pulsed electron-beam annealing of selenium-implanted gallium arsenide
Applied Physics Letters, 1979
Laser annealing of capped and uncapped GaAs
Electronics Letters, 1979
Quantum-Transport Theories and Multiple Scattering in Doped Semiconductors. II. Mobility of $n$ -type Gallium Arsenide
Physical Review B, 1967
A MATHEMATICAL ANALYSIS OF SOLUTE REDISTRIBUTION DURING SOLIDIFICATION
Canadian Journal of Physics, 1955